7/12/00 db91065m-aas/a1 approvals l ul recognised, file no. e91231 description the IS725 is an optically coupled isolator consisting of infrared light emitting diode and a high voltage npn silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a standard 6pin dual in line plastic package. features l options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. l high isolation voltage (5.3kv rms ,7.5kv pk ) l high current transfer ratio ( 1000% min) l high bv ceo (300v min.) l low collector dark current :- 1 m a max. at 200v v ce l low input current 1ma i f applications l modems l copiers, facsimiles l numerical control machines l signal transmission between systems of different potentials and impedances IS725 high voltage darlington output optically coupled isolator absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 6v power dissipation 70mw output transistor collector-emitter voltage bv ceo 300v collector-base voltage bv cbo 300v emitter-basevoltage bv eco 6v collector current i c 150ma power dissipation 300mw power dissipation total power dissipation 350mw 10.16 0.26 option g 7.62 option sm surface mount 0.26 0.5 dimensions in mm 7.0 6.0 1.2 7.62 3.0 13 max 3.35 4.0 3.0 2.54 7.62 6.62 0.5 1 3 4 6 2 5 isocom inc 1024 s. greenville ave, suite 240, allen, tx 75002 usa tel: (214) 495-0755 fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, ts25 1yd england tel: (01429)863609 fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 10.46 9.86 0.6 0.1 1.25 0.75
db91065m-aas/a1 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.4 v i f = 10ma reverse voltage (v r ) 6 v i r = 10 m a reverse current (i r ) 10 m a v r = 6v output collector-emitter breakdown (bv ceo ) 300 v i c = 1ma collector-base breakdown (bv cbo ) 300 v i c = 0.1ma emitter-base breakdown (bv ebo ) 6 v i e = 0.1ma collector-emitter dark current (i ceo ) 1 m a v ce = 200v coupled current transfer ratio (ctr) 1000 4000 % 1ma i f , 2v v ce collector-emitter saturation voltagev ce(sat) 1.2 v 20ma i f , 100ma i c input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) input-output capacitance cf 1 pf v = 0, f =1mhz cut-off frequency fc 1 khz v ce = 2v, i c = 20ma, r l = 100 w, r be = open output rise time tr 300 m s v ce = 2v, i c = 20ma, output fall time tf 100 m s r l = 100 w, r be = open note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 7/12/00 electrical characteristics ( t a = 25c unless otherwise noted ) input output 10% 90% 10% 90% t off t r t on t f output v cc i c = 20ma input figure 1 100 w
db91065m-aas/a1 7/12/00 0 0.5 1.0 relative current transfer ratio relative current transfer ratio vs. ambient temperature 0 0.4 0.8 1.2 1.6 2.0 40 60 collector-emitter voltage v ce ( v ) 20 0 collector current vs. collector-emitter voltage 1.5 -30 0 25 50 75 100 ambient temperature t a ( c ) -30 0 25 50 75 100 125 ambient temperature t a ( c ) 200 0 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 0 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature 100 forward current i f (ma) -30 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 i f = 20ma i c = 100ma 80 100 120 140 collector current i c (ma) i f = 0.5ma 1ma 2ma 4ma 10ma i f = 1ma v ce = 2v 300 400 -30 0 25 50 75 100 ambient temperature t a ( c ) collector dark current i ceo (a) collector dark current vs. ambient temperature v ce = 200v 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5
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